Index

Industrials applications of SiC
November 18-19th 2010 - Villeurbanne, France
	Université Claude Bernard Lyon 1 Scientific Campus ‘La Doua’ 43 bd du 11 Novembre 1918 69100 Villeurbanne, France Conference venue: CPE Building - 4 rue Victor Grignard This workshop “Industrial applications of Silicon carbide” aims at making the bridge between the various fields of application of this exceptional semiconducting ceramic.
The scope is broad and will cover from composite to electronic applications, focusing on the state of the art for each product and application and the research under progress. Oral presentations will be done by representatives of several companies or collaborators. Presentation of job opportunities will also be addressed. As a result, this workshop aims also to act as a job fair for young researchers. This event is funded and organized by the European RTN project MANSiC (MRTN-CT-2006-035735 http://www.mansic.eu/ ). Results obtained by this network will be presented by the young researchers involved in the project through a poster session. This workshop is opened to all persons interested in knowing more about SiC material and/or in taking contact for job applications. Please ensure that you mark the dates in your agenda and check the website from time to time for updated information.
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Promising results
Recently, new growth techniques of 3C-SiC material are being developed in Europe with very promising results since the cristalline defects called twins can be completely eliminated. There is no real competitor on the international level using similar techniques which means that Europe is in advance on this specific subject and has a major role to play. A joint effort on the growth of 3C-SiC on hexagonal substrate in the framework of MANSiC project would surely allow developing an alternative and European commercial source of this polytype with better crystalline quality than the actual commercial product.

Scientific methodology
Such improved material would be first characterized and tested (from surface polishing to device fabrication) by the proposed MANSiC consortium with the aim of fabricating power devices such as VDMOSFET or MESFET.

Native 3C-SiC crystals grown by spontaneous nucleation on graphite during CF-PVT experiments

Training and workshops
Such a complex and interrelated research project is an excellent base to assemble a training project for young researchers in the field of solid state physics and materials science. PhD students and young researchers will be trained in the various fields : from new growth techniques, to wide band-gap material characterization and fabrication of power devices.

Workshops and summer schools will be organized to provide the young researchers with the essential scientific knowledge background and to give them the opportunity to present their work and results to the scientific community.