Marie Curie Actions
 
Project funded by the EC within the 6th Framework Programme
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Promising results
Recently, new growth techniques of 3C-SiC material are being developed in Europe with very promising results since the cristalline defects called twins can be completely eliminated. There is no real competitor on the international level using similar techniques which means that Europe is in advance on this specific subject and has a major role to play. A joint effort on the growth of 3C-SiC on hexagonal substrate in the framework of MANSiC project would surely allow developing an alternative and European commercial source of this polytype with better crystalline quality than the actual commercial product.

Scientific methodology
Such improved material would be first characterized and tested (from surface polishing to device fabrication) by the proposed MANSiC consortium with the aim of fabricating power devices such as VDMOSFET or MESFET.

Native 3C-SiC crystals grown by spontaneous nucleation on graphite during CF-PVT experiments
Training and workshops
Such a complex and interrelated research project is an excellent base to assemble a training project for young researchers in the field of solid state physics and materials science. PhD students and young researchers will be trained in the various fields : from new growth techniques, to wide band-gap material characterization and fabrication of power devices.

Workshops and summer schools will be organized to provide the young researchers with the essential scientific knowledge background and to give them the opportunity to present their work and results to the scientific community.

NEWS : EMRS 2010
Symposium F. WIDE BANDGAP CUBIC SEMICONDUCTORS : from growth to devices
7-8 June 2010, Strasbourg, France
The aim of this symposium – organized as a specific “MANSiC” session within the EMRS conference - is to serve as an international forum for the discussion on the recent research progress in crystal growth, processing and characterization of wide bandgap semiconductors having the cubic (blende) crystalline structure (WBCS). Despite their promising properties, these materials are generally difficult to elaborate in the cubic structure. Even if, at first glance, each case may be different, they share important issues to be tackled such as the choice of an adapted substrate, innovation in deposition techniques or the defect forming within the material (polytype inclusions, twins…). Their destiny is more probably linked together since the emergence of one of these cubic materials could help the others by providing better adapted seeds than the usual ones.
The materials targeted are mainly 3C-SiC, diamond, cubic III-N materials and c-ZnO though emerging and new CWBS are also welcome. Both theoretical and experimental studies are within the scope of this simposium. Current challenges include the understanding and optimization of the growth processes for bulk and thin films; stabilization and production high-quality CWBS material; development of adapted deposition processes; determination of the fundamental and experimental properties of CWBS; processing challenges; possibility of CWBS cross-integration for bandgap engineering; device demonstration and identification of the potential of CWBS and the targeted applications.
This symposium would be a unique opportunity for disseminating MANSiC's achievements and also for the different WBG cubic semiconductors communities to meet together and share experiences and perspectives on their respective materials.
 
 
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