Index

Promising results
Recently, new growth techniques of 3C-SiC material are being developed in Europe with very promising results since the cristalline defects called twins can be completely eliminated. There is no real competitor on the international level using similar techniques which means that Europe is in advance on this specific subject and has a major role to play. A joint effort on the growth of 3C-SiC on hexagonal substrate in the framework of MANSiC project would surely allow developing an alternative and European commercial source of this polytype with better crystalline quality than the actual commercial product.

Scientific methodology
Such improved material would be first characterized and tested (from surface polishing to device fabrication) by the proposed MANSiC consortium with the aim of fabricating power devices such as VDMOSFET or MESFET.

Native 3C-SiC crystals grown by spontaneous nucleation on graphite during CF-PVT experiments

Training and workshops
Such a complex and interrelated research project is an excellent base to assemble a training project for young researchers in the field of solid state physics and materials science. PhD students and young researchers will be trained in the various fields : from new growth techniques, to wide band-gap material characterization and fabrication of power devices.

Workshops and summer schools will be organized to provide the young researchers with the essential scientific knowledge background and to give them the opportunity to present their work and results to the scientific community.

SiC epitaxial growth: from thin layers to bulk material

Winter school , January 25-29, 2010, Linköping, Sweden
This is a series of three schools that are organized within a European Research Training Network.
The MANSiC project promotes the training of young researchers on the Growth, Characterization, and Applications of Advanced Materials, and more specifically on 3C-SiC.

This professional training school offers a comprehensive education by presenting the standard and innovative approaches in growth of modern semiconductor materials and relevant measurement technologies.
The current school is addressed to PhD and postgraduate students, working in the scientific areas of Solid State Physics and Materials Science, and having a special interest in epitaxial and bulk growth of SiC.

For detailed information about the Winter school and for registration,
please click on the following link: pam3.ifm.liu.se