Key data |
Acronym |
MANSiC |
Proposal number |
MRTN-CT-2006-035735 |
Start date |
01/01/2007 |
End date |
31/12/2010 |
Full title |
Promoting and structuring a multidisciplinary academic-industrial network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates |
Field of research |
Materials engineering |
EC contribution |
3 364 706 € |
Global person days |
524 MM (recruited) and 690 MM (institutions staff) |
i.e.: 10 Early stage researchers (36 months each) and 9 Experienced researchers (from 12 to 22 months each) |
|
| |
Project coordinator |
Institution name |
Université Claude Bernard Lyon 1 |
Contact name |
Dr. Gabriel FERRO |
Email |
|
|
| |
|
Université Claude Bernard Lyon 1 (France) |
Linköping University (Sweden) |
Institut National Polytechnique de Grenoble (France) |
Novasic SA (France) |
Universität Erlangen-Nürnberg (Germany) |
Aristotle University of Thessaloniki (Greece) |
Centre National de la Recherche scientifique (France) |
Vilnius University (Lithuania) |
Consejo Superior de Investigaciones Cientificas (Spain) |
Acreo AB (Sweden) |
Consiglio Nazionale delle Ricerche (Italy) |
Lyon Ingénierie Projets (France) |
|
| |
|
|
Workshops |
| HeT-SiC #2 |
Heteroepitaxial growth of SiC |
| SiC Appl#2 |
SiC surface preparation and industrial issues |
| SiC Appl#3 |
From electronic to composite applications |
|
|
Training schools |
| PAM#1 |
Growth and characterization of advanced materials focused on structural characterization |
| PAM#2 |
Growth and characterization of advanced materials focused on optical characterization |
| SiC Appl#1 |
Introduction session on device, design and fabrication |
| PAM#3 |
Introduction session on materials focused on electrical characterization |
| SiC Epi |
SiC epitaxial growth: from thin layers to bulk material |
|
| |
| Conferences |
ECSSRM 2008 |
European conference on silicon carbide and related materials (from material to devices) |
CSCRM 2009 |
International conference on silicon carbide and related materials |
EMRS 2010 |
Special session dedicated to MANSiC and other 3C-SiC related results |
|
| |
| Project organisation |
WP1 - Material growth and related aspects |
| To grow high quality 3C-SiC material on 6H or 4H-SiC substrates |
WP2 - Material characterization |
| To characterize the physical and electrical properties of the grown 3C-SiC, to develop novel non-destructive evaluation techniques |
WP3 - New devices and demonstrators |
| To design an develop new devices based on the 3C-SiC/ α -SiC heterostructures and bulk 3C-SiC |
Researchers recruitment |
Researchers training |
Website implementation |
|
| |
