Marie Curie Actions
Project funded by the EC within the 6th Framework Programme
 
 
 
 
 
 
  3C-SiC Material
  Characterizations
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3C-SiC Material
 
a) Thin layers
VLS apparatus during growth
Schematic drawing of the SiC growth by vapour-liquid-solid (VLS) mechanism
Surface morphology of single-domain 3C-SiC thin layers grown by VLS

b) Bulk-like material

 
Native 3C-SiC crystals grown by spontaneous nucleation on graphite during CF-PVT experiments
Cross section of a thick 3C-SiC layer grown by sublimation epitaxy on 6H-SiC substrate
Bulk-like 3C-SiC polycrystal grown at high speed by CF-PVT.
X-ray imaging of the CF-PVT growth chamber during experiment.
A thick 3C-SiC layer grown by sublimation epitaxy with 1 mm/h growth rate