Marie Curie Actions
Project funded by the EC within the 6th Framework Programme
 
 
 
 
 
 
  3C-SiC Material
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Characterizations
 

a) Structural

Plane view TEM micrograph of a 3C-SiC single-domain layer grown by VLS
Cross sectional TEM micrograph of a 3C-SiC single-domain layer grown by VLS
     
It was recently shown that SF’s are generated during growth in order to absorb the lattice deformation, as the SiC density changes with thickness. Due to the fact that the SF energy in 3C-SiC is negative, about –3mJ/m2, the length of a SF in 3C-SiC can only be limited by the size of the crystal or the presence of other defects that act as obstacles. The generation of SF’ s even under a small stress is studied by in situ experiments in the Transmission Electron Microscope. Converging the electron beam in an area for a few seconds was sufficient to develop stress due to thermal gradient.
     
High Resolution Electron Microscope JEOL 2011 (at 200KV), with a resolution of about 0.194nm.
Conventional Electron Microscope JEOL 100CX (at 100KV) with a better resolution than 0.5nm, which dispose receptor of samples with a rotation and inclination ability as well as receptor of samples with a heating and cooling ability.
Atomic Force Microscope (AFM), with three scanners of (100x100) μm, (2.5x2.5) μm, a liquid scanner of (2.5x2.5) μm and a resolution of the nanometer scale.

b) Optical

Photoluminescence spectrum recorded at low temperature on a bulk 3C-SiC material grown by CF-PVT
Experimental apparatus used for the picosecond grating technique
Scheme of the optical setup for the picosecond grating technique
3C-SiC layer on 6H-SiC substrate during MOS capacitance measurements
Admittance spectroscopy of a
3C-SiC layer grown by VLS
Test structures made on 3C-SiC grown on Si