Marie Curie Actions
Project funded by the EC within the 6th Framework Programme
 
 
 
 
 
 
  3C-SiC Material
  Characterizations
  Devices
  Partners pictures
  Training events
 
 
 
 
Photo Gallery
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Devices
  

a) Fabrication facilities
Clean room, direct writing lithography
Clean room, AFM lithography
Clean room, RTCVD annealing

b) Devices made of 3C or 4H

Schematic drawing of a targeted high Electron Mobility Transistor (HEMT) made of 3C/6H-SiC heterostructure
UV detectors made
of 4H-SiC
Top view of a VDMOS made in 4H-SiC
Schottky rectifier made of 4H-SiC