Project funded by the EC within the
6th Framework Programme
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3C-SiC Characterization
/ c) Electrical
N°1
3C-SiC layer on 6H-SiC substrate during MOS capacitance measurements
N°2
Admittance spectroscopy of a
3C-SiC layer grown by VLS
N°3
Test structures made
on 3C-SiC grown on Si
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