Le silicium, ça carbure, Club, magazine de l'université Claude Bernard Lyon I, juin 2004 Download pdf
Scientific documents
Control of the Supersaturation in the CF-PVT Process for the growth of Silicon Carbide Crystals: Research and Applications, Didier Chaussende,Magali Ucar, Laurent Auvray, Francis Baillet, Michel Pons and Roland Madar, Laboratoire des Matériaux et du Génie Physique, INPG-CNRS, NOVASiC, CRYSTAL GROWTH & DESIGN 2005 VOL.5 , NO.4 1539-1544.
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Characterization of a 3C-SiC Single Domain Grown on 6H-SiC(0001) by a apor-Liquid-Solid Mechanism & DESIGN, Maher Soueidan,Gabriel Ferro, Bilal Nsouli,Mohamad Roumie,Efstathios Polychroniadis, Michel Kazan, Sandrine Juillaguet, Didier Chaussende, Nada Habka, John Stoemenos, Jean Camassel and Yves Monteil, Université Claude Bernard Lyon 1-CNRS, AUTH, CNRS-Université Montpellier 2, INPG-CNRS, Lebanise Atomic Energy Commission-CNRS CRYSTAL GROWTH & DESIGN 2006 VOL.6 NO.11 2598-2602.
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X-ray diffuse scattering from stacking faults in thick 3C-SiC single crystals, A. Boulle, D. Chaussende, L. Latu-Romain, F. Conchon, O. Masson and R. Guinebretière, INPG-CNRS, ENSCI-CNRS, Applied Physics Letters 89, 091902 (2006).
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AVapor–Liquid–Solid Mechanism for Growing 3C-SiC Single-Domain Layers on 6H-SiC(0001), Maher Soueidan and Gabriel Ferro, Université Claude Bernard Lyon 1-CNRS, Advance functional materials 2006.
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Publications and conference abstracts
Microstructural investigation of 3C-SiC growth on 6H-SiC substrate using the VLS mechanism, E.K. Polychroniadis, A. Andreadou, I. Tsiaoussis, N. Frangis, M. Soueidan, G. Ferro Presented on The 15th International Conference on Crystal Growth, August 12 - 17, 2007, Salt Lake City, Utah, to be published in Journal of Crystal Growth
3C-SiC island formation on 6H-SiC(0001) substrate from a liquid phase, O. Kim Hak, M. Soueidan, G. Ferro, O. Dezellus, A.Andreadou, E.K. Polychroniadis, J.C.Viala,
Submitted in the International conference of Silicon Carbide and Related Materials, 14-19 October 2007, Otsu, Japan.
Structural characterization of CF-PVT grown bulk 3C-SiC, Alkioni Mantzari, Frédéric Mercier, Maher Soueidan, Didier Chaussende, Gabriel Ferro, Efstathios Polychroniadis Submitted in the International conference of Silicon Carbide and Related Materials, 14-19 October 2007, Otsu, Japan.
Prospects for 3C-SiC Bulk Crystal Growth, D. Chaussende, F. Mercier, A. Boulle, F. Conchon, M.Soueidan, G. Ferro, A. Mantzari, A. Andreadou, E.K. Polychroniadis, C. Balloud, S. Juillaguet, J.Camassel and M.Pons Presented in the E-MRS 2007 Spring meeting, 28 May-1 June, Strasbourg, France.
